Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BV
DSS
30V
▼ Low Gate Charge R
DS(ON)
6mΩ
▼ Fast Switching Speed I
D
75A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
E
AS
Single Pulse Avalanche Energy
4
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2 ℃ /W
Rthj-a Thermal Resistance Junction-ambient
3
Max. 85 ℃ /W
Data & specifications subject to change without notice
AP0603GMA
Rating
Pb Free Plating Product
Continuous Drain Current, V
GS
@ 10V
62.5
-55 to 150
55
300
29
24
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Gate-Source Voltage
Parameter
Operating Junction Temperature Range
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Thermal Data
30
0.5
-55 to 150
200401053-1/4
±20
75
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
S
S
S
G
D
APAK-5