Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BV
DSS
30V
▼ Low Gate Drive Voltage R
DS(ON)
4.2mΩ
▼ Lower On-resistance I
D
75A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
E
AS
Single Pulse Avalanche Energy
4
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 1.8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient
3
Max. 85 ℃ /W
Data & specifications subject to change without notice
29
24
30
Parameter
Operating Junction Temperature Range
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
0.6
-55 to 150
200429052-1/4
Thermal Data
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
70
-55 to 150
±12
75
56
300
AP0503GMA
Rating
Pb Free Plating Product
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
S
S
S
G
D
APAK-5