Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
700V
▼ Repetitive Avalanche Rated R
DS(ON)
2.4Ω
▼ Fast Switching I
D
4A
▼ Simple Drive Requirement
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃ /W
Data & specifications subject to change without notice
4
4
15
33
Linear Derating Factor 0.26
-55 to 150
Parameter
AP04N70BF-H
100
Rating
700
Pb Free Plating Product
Parameter
200704051-1/6
±30
4
2.5
Storage Temperature Range -55 to 150
G
D
S
G
D
S
TO-220FM
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.