Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Repetitive Avalanche Rated BV
DSS
600V
▼ Fast Switching Speed R
DS(ON)
3.6Ω
▼ Simple Drive Requirement I
D
3.3A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃ /W
Data & specifications subject to change without notice
Parameter
3.3
Parameter
-55 to 150
85
200705052-1/4
±30
3.3
Storage Temperature Range
Linear Derating Factor
-55 to 150
0.36
45
13.2
AP03N70H/J
2.1
3.3
600
Rating
Pb Free Plating Product
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP03N70J) is available for low-profile
applications.
G
D
S TO-252(H)
G
D
S
TO-251(J)