AP03N70I-H
器件描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小:45.92KB,共4页
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器件资料摘要:
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Repetitive Avalanche Rated BV
DSS
700V
▼ Fast Switching Speed R
DS(ON)
4.4Ω
▼ Simple Drive Requirement I
D
2.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4.3 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃ /W
Data & specifications subject to change without notice
Rating
700
Pb Free Plating Product
AP03N70I-H
2.5
1.6
Storage Temperature Range -55 to 150
8
29
Linear Derating Factor 0.23
Parameter
2.5
Parameter
-55 to 150
32
200417062-1/4
±30
G
D
S
G
D
S TO-220CFM(I)
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.