Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
900V
▼ Low On-resistance R
DS(ON)
7.2Ω
▼ Fast Switching Characteristics I
D
1.9A

Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.0 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W
Data & specifications subject to change without notice
AP02N90P
18
-55 to 150
Parameter
1.9
1.9
1.2
Parameter Rating
900
Pb Free Plating Product
200418062-1/4
Storage Temperature Range -55 to 150
6
62.5
Linear Derating Factor 0.5
±30
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.