Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
600V
▼ Repetitive Avalanche Rated R
DS(ON)
8Ω
▼ Fast Switching I
D
1.6A
▼ Simple Drive Requirement
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.2 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W
Data & specifications subject to change without notice 200705051-1/4
1.6
±30
0.5
Linear Derating Factor
AP01N60P
13
0.31
1.6
1
Pb Free Plating Product
6
39
Parameter Rating
600
-55 to 150
Storage Temperature Range -55 to 150
Parameter
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
G
D
S
TO-220
G
D
S