General Description
The AAT8543 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current
1
(max):
-4.2A @ 25°C
• Low On-Resistance:
— 57mΩ @ V
GS
= -4.5V
— 104mΩ @ V
GS
= -2.5V
SC70JW-8 Package
DDDD
SSSG
Top View
1234
8765
AAT8543
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Thermal Characteristics
1
Symbol Description Typ Max Units
R
θJA
Typical Junction-to-Ambient Steady State 100 124 °C/W
R
θJA2
Maximum Junction-to-Ambient t<5 Seconds 62 76 °C/W
R
θJF
Typical Junction-to-Foot 35 42 °C/W
P
D
Maximum Power Dissipation
T
A
= 25°C 1.6
W
T
A
= 70°C 1.0
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
= 150°C
1
T
A
= 25°C ±4.2
T
A
= 70°C ±3.3
A
I
DM
Pulsed Drain Current
2
±20
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.2
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Temperature Range -55 to 150 °C
8543.2005.04.1.0 1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design; howev-
er, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.