AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1 1
General Description
The AAT8107 low threshold 20V, P-channel MOS-
FET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density propri-
etary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-pow-
ered applications and protection in battery packs.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
Features
•V
DS(MAX)
= -20V
•I
D(MAX)
1
= -6.5A @ 25°C
• Low R
DS(ON)
:
• 35mΩ @ V
GS
= -4.5V
• 60mΩ @ V
GS
= -2.5V
SOP-8L Package
DDDD
SSSG
Top View
1234
8765
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient Steady State
1
80
R
θJA2
Maximum Junction-to-Ambient t<10 Seconds
1
50 °C/W
R
θJF
Typical Junction-to-Foot
1
27
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±6.5
T
A
= 70°C ±5.2
A
I
DM
Pulsed Drain Current
2
±32
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.7
P
D
Maximum Power Dissipation
1
T
A
= 25°C 2.5
W
T
A
= 70°C 1.6
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design; however,
R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
TrenchDMOS
™