General Description
The AAT7361 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small-outline, J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the footprint of a TSOPJW8
package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current
1
(max) -3.0A @ 25°C
• Low On-Resistance:
— 100mΩ @ V
GS
= -4.5V
— 175mΩ @ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1 D1 D2 D2
S1 G1 S2 G2
Top View
1234
8765
AAT7361
20V P-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Thermal Characteristics
1
Symbol Description Typ Max Units
R
θJA
Junction-to-Ambient Steady State, One FET On 124 155 °C/W
R
θJA2
Junction-to-Ambient t<5 Seconds 74 90 °C/W
R
θJF
Junction-to-Foot 66 80 °C/W
P
D
Maximum Power Dissipation
T
A
= 25°C 1.4
W
T
A
= 70°C 0.9
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
= 150°C
1
T
A
= 25°C ±3.0
T
A
= 70°C ±2.4
A
I
DM
Pulsed Drain Current
2
±9
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.0
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Temperature Range -55 to 150 °C
7361.2005.04.1.0 1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design;
however, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.