01/99 B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25¡C
2N6451 2N6452
Reverse Gate Source Voltage – 20 V – 25 V
Reverse Gate Drain Voltage – 20 V – 25 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 360 mW 360 mW
Power Derating 2.88 mW/°C 2.88 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N6451 2N6452 Process NJ132L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 20 – 25 V I
G
= – 1 µA, V
DS
= ØV
– 0.1 nA V
GS
= – 10V, V
DS
= ØV
Gate Reverse Current I
GSS
– 0.5 nA V
GS
= – 15V, V
DS
= ØV
– 0.2 µA V
GS
= – 10V, V
DS
= ØV T
A
= 125°C
– 1 µA V
GS
= – 15V, V
DS
= ØV T
A
= 125°C
Gate Source Cutoff Voltage V
GS(OFF)
– 0.5 – 3.5 – 0.5 – 3.5 V V
DS
= 10V, I
D
= 0.5 nA
Drain Saturation Current (Pulsed) I
DSS
520520mAV
DS
= 10V, V
GS
= ØV
Dynamic Electrical Characteristics
Common Source
| Y
fs
|
15 30 15 30 mS V
DS
= 10V, I
D
= 5 mA f = 1 kHz
Forward Transmittance
mS V
DS
= 10V, I
D
= 15 mA f = 1 kHz
Common Source
| Y
os
|
50 50 µS V
DS
= 10V, I
D
= 5 mA f = 1 kHz
Output Conductance
µS V
DS
= 10V, I
D
= 15 mA f = 1 kHz
Common Source
C
iss
25 25 pF V
DS
= 10V, I
D
= 5 mA f = 1 kHz
Input Capacitance
pF V
DS
= 10V, I
D
= 15 mA f = 1 kHz
Common Source Reverse
C
rss
55pF
DS
= 10V, I
D
= 5 mA f = 1 kHz
Transfer Capacitance
pF V
DS
= 10V, I
D
= 15 mA f = 1 kHz
Equivalent Short Circuit
¯e
N
510nV/√Hz V
DS
= 10V, I
D
= 5 mA f = 10 kHz
Input Noise Voltage
38nV/√Hz V
DS
= 10V, I
D
= 5 mA f = 1 kHz
Noise Figure NF 1.5 2.5 dB
V
DS
= 10V,
I
D
= 5 mA
f = 10 Hz
R
G
= 10 kΩ
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-25