TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/505
Devices Qualified Level
2N6286 2N6287




JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6286 2N6287 Unit
Collector - Emitter Voltage V CEO - 80 - 100 Vdc
Colle ctor - Base Voltage V CBO - 80 - 100 Vdc
Emitter - Base Voltage V EBO - 7.0 Vdc
Base Current I B - 0.5 Adc
Collector Current I C - 20 Adc
Total Power Dissipation (1) @ T C = +25 0 C
@ T C = +100 0 C P T
175
87.5
W
W
Operating & Storage Junction Temperature Range T op , T stg - 65 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 0.857 0 C/W
1) Derate linearly @ 1.17 W/ 0 C above T C > +25 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = - 100 mAdc 2N6286
2N6287

V (BR) CEO

- 80
- 100

Vdc
Collector - Emitter Cutoff Current
V CE = - 40 Vdc 2N6286
V CE = - 50 Vdc 2N6287

I CEO

- 1.0
- 1.0
mAdc
Collector - Emitter Cutoff Current
V CE = - 80 Vdc, V BE = 1.5 Vdc 2N6286
V CE = - 100 Vdc, V BE = 1.5 Vdc 2N6287
I CEX

- 0.5
- 0.5
mAdc
Emitter - Base Cutoff Current
V EB = - 7.0 Vdc I EBO - 2.5 Adc

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120101
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TO - 3*
(TO - 204AA)