BTW 68 (N)
March 1995
SCR
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
30
35
A
I
T(AV)
Average on-state current (180°
conduction angle,single phase circuit)
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
19
22
A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp=8.3 ms 420 A
tp=10 ms 400
I
2
tI
2
t value tp=10 ms 800 A
2
s
dI/dt Critical rate of rise of on-state current
Gate supply : I
G
= 100 mA di
G
/dt = 1 A/µs
100 A/µs
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230 °C
TOP 3
(Plastic)
K
A
G
.HIGH SURGE CAPABILITY
.HIGH ON-STATE CURRENT
.HIGH STABILITY AND RELIABILITY
.BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTW 68 BTW 68 / BTW 68 N Unit
200 400 600 800 1000 1200
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
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