1
25MT060WF
Target Data 05/01
V
CES
= 600V
V
CE(on) typ.
= 2.2V @
V
GE
= 15V, I
C
= 25A
T
C
= 25°C
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
Collector-to-Emitter Voltage 600 V
I
C
Continuos Collector Current @ T
C
= 25°C 50 A
@ T
C
= 100°C 25
I
CM
Pulsed Collector Current 200
I
LM
Peak Switching Current 200
I
F
Diode Continuous Forward Current @ T
C
= 100°C 25
I
FM
Peak Diode Forward Current 200
V
GE
Gate-to-Emitter Voltage ± 20 V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
P
D
Maximum Power Dissipation @ T
C
= 25°C 900 W
@ T
C
= 100°C 400
Parameters Max Units
Warp Speed IGBT
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermystor Inside
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
Features
• Optimized for Welding, UPS and SMPS Applications
• Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resistance
Benefits