A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.


CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS
N
F

F = 9375 MHz P
lo
= 1.0 mW N
Fif
= 1.5 dB
R
L
= 100 Ω I
F
= 30 MHz

7.5 dB
V
SWR
1.3
Z
IF
R
L
= 22 Ω f = 1000 Hz 335 465 Ω
frange 8.0 12.4 GHz

SILICON MIXER DIODE
1N415E
DESCRIPTION:
The ASI 1N415E is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.

FEATURES:
• High burnout resistance
• Low noise figure
• Hermetically sealed package

MAXIMUM RATINGS
I
F
20 mA
V
R
1.0 V
P
DISS
2.0 (ERGS) @ T
C
= 25 °C
T
J
-55 °C to +150 °C
T
STG
-55 °C to +150 °C

PACKAGE STYLE DO- 23