Issue 4 - May 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage V
DS
=60V
On-state resistance 550mH9024
Nominal load current 1.4A (V
IN
= 5V)
Clamping energy 550mJ
Ordering information

Device marking
BSP75G
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
Features
• Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Load dump protection (actively protects load)
Logic level input
Note:
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
BSP75GTA 7 12mm embossed 1,000
BSP75GTC 13 12mm embossed 4,000
SOT223
D
S
D
IN