1
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)
Access Time – 90 ns
Sector Erase Architecture
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Two 8K Word (16K Byte) Sectors with Individual Write Lockout
Four 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
Memory Plane B: Fourteen 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 25 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as
524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball
CBGA packages. The device has CE, and OE control signals to avoid any bus
Rev. 1265E–01/00
8-megabit
(512K x 16/1M x 8)
3-volt Only
Flash Memory
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY READY/BUSY Output
VPP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
VCCQ Output Power Supply
(continued)