N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor

AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted)
T HE R MAL C HAR AC T E R IS T IC S
T hermal R esistance, J unction-to-C ase
T hermal R esistance, J unction-to-Ambient
R J C
R J A
2.5
62.5
/WC
/WC
30
P arameter S ymbol
Limit Unit
Drain-S ource Voltage
V DS V
G ate-S ource Voltage V G S 20 V
-P ulsed
ID 55 A
IDM 140 A
Drain-S ource Diode F orward C urrent IS 55 A
Maximum P ower Dissipation
P D
W
Operating and S torage Temperature R ange T J , T S T G -65 to 175
C
@ T c=25 C
Derate above 25 C
75
0. 5 W / C
Drain C urrent-C ontinuous @ T J =125 C
a
S
G
D
S DB S E R IE S
T O-263(DD-P AK )
G
S
D
S DP S E R IE S
T O-220
S
D
G
4
1
P R ODUC T S UMMAR Y
V DS S ID R DS (on) ( m W )
30V 55A
12.5 @ V G S = 10V
20 @ V G S = 4.5V
55N03L
F E AT UR E S
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & T O-263 package.
S eptember , 2002
T Y P