A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA 30 V
BV
CBO
I
C
= 100 µA 40 V
BV
EBO
I
E
= 100 µA 3.5 V
I
CEO
V
CE
= 20 V 50 µA
I
CBO
V
CB
= 15 V 10 µA
h
FE
V
CE
= 15 V I
C
= 50 mA 25 300 ---
V
CE(SAT)
I
C
= 100 mA I
B
= 10 mA 0.2 V
V
BE(SAT)
I
C
= 100 mA I
B
= 10 mA 1.0 V
f
t

V
CE
= 15 V I
C
= 25 mA f = 200 MHz
I
C
= 50 mA f = 200 MHz
I
C
= 100 mA f = 200 MHz
1000
120
1000

2400

MHz
C
cb
V
CB
= 30 V f = 100 KHz 1.0 3.5 pF
C
eb
V
CB
= 0.5 V f = 100 KHz 15 pF
h
fe
V
CE
= 15 V I
C
= 50 mA f = 1.0 KHz 25 350 ---
r
b'Cc
V
CE
= 15 V I
C
= 50 mA f = 31.8 MHz 2.0 20 pS
N
F
V
CE
= 15 V I
C
= 50 mA f = 200 MHz 8.0 dB
G
pe
V
CC
= 15 V I
C
= 50 mA f = 200 MHz 7.0 dB
I
M
V
CC
= 15 V I
C
= 50 mA V
out
= +50 dbmV -50 dB
X
M
V
CC
= 15 V I
C
= 50 mA V
out
= +50 dbmV -45 dB

NPN SILICON HIGH FREQUENCY TRANSISTOR
2N5943
DESCRIPTION:
The 2N5943 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
30 V
P
DISS

1.0 W @ T
A
= 25
O
C
3.5 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
125
O
C/W
PACKAGE STYLE TO-39


1 = EMITTER 2 = BASE
3 = COLLECTOR