Pre-production
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 05-May-05
Mimix Broadband’s four stage 26.0-31.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +36.0 dBm. The
device also includes Lange couplers to achieve good
output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
26.0-31.0 GHz GaAs MMIC
Power Amplifier
Absolute Maximum Ratings
Page 1 of 7
General Description
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1700 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF TAble
MTTF Table
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
4
Features Chip Device Layout
4
Balanced Design Provides Good Output Match
On-Chip Temperature Compensated Output
Power Detector
32.0 dB Small Signal Gain
+36.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
VDC
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
7.0
12.0
32.0
+/-1.0
50.0
+26.0
+36.0
+4.5
-0.7
1100
0.7
Max.
31.0
-
-
-
-
-
-
-
+5.5
0.0
1400
-
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vdet1,2=1.0V or Vdet1,2=5.5V and Rdet=5.6kΩ.
1,2
2
3
29MPA0373