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BAS170

器件描述:Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:96.04KB,共4页
Sponsor by e络盟
器件资料摘要:
BAS 170W
Semiconductor Group 1 Edition A01, 11.07.94
ESD: Electrostastic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code
(tape and reel)
Pin Configuration
1 2
Package
1)
BAS 170W 7 Q62702-A1072 A C SOD-323
Maximum Ratings
Parameter Symbol BAS 170W Unit
Reverse voltage VR 70 V
Forward current I
F
70 mA
Surge forward current, t ≤ 10 ms I
FSM
100 mA
Total Power dissipation T
S
≤ 97°C P
tot
250 mW
Operating temperature range T
op
-55 +150°C °C
Storage temperature range T
stg
-55...+150°C °C
Thermal Resistance
Junction-ambient
1)
R
th JA
≤ 320 K/W
Junction-soldering point R
th JS
≤ 210 K/W
_________________________________
1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm
2
Cu
Silicon Schottky Diode
G6cGeneral-purpose diodes for high-speed switching
G6cCircuit protection
G6cVoltage clamping
G6cHigh-level detecting and mixing
G6cSmall package SOD-323