2SD2678
Transistors
1/2
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0
Abbreviated symbol : XX
Packaging type
Code
Taping
Package MPT3
Basic ordering unit (pieces)
2SD2678
T100
1000Part No.
3A / 12V Bipolar transistor
2SD2678


zApplications zExternal dimensions (Unit : mm)
Low frequency amplification, driver


zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA)


zStructure
NPN epitaxial planar silicon transistor


zAbsolute maximum ratings (Ta=25°C) zPackaging specifications
Power dissipation
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
PC
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
15
12
6
3
0.5
2
150
−55 to +150
Unit
V
V
V
A
ICP
DC
Pulse 6
W
°C
°C
∗1
∗2
∗3
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.



zElectrical characteristics (Ta=25°C)
Parameter Conditions
Collector-base breakdown voltage IC=10µA
Collector-emitter breakdown voltage IC=1mA
Emitter-base breakdown voltage IE=10µA
Collector cut-off current VCB=15V
Emitter cut-off current VEB=6V
Collector-emitter saturation voltage IC/IB=1.5A/30mA
DC current gain VCE=2V, IC=500mA
Transition frequency VCE=2V, IE= −500mA , f=100MHz
Collector output capacitance
∗ Pulsed
∗
∗
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
120
−
360
20
Max.
−
−
−
100
100
250
680
−
−
Unit
V
nA
mV
−
MHz
pF VCB=10V , IE=0mA , f=1MHz