Pre-production
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier. The use
of integrated LO doubler and LO buffer amplifier makes the provision
of the LO easier than for fundamental mixers at these frequencies. IF
and IF mixer inputs are provided through an external 180 degree
hybrid. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
18.0-36.0 GHz GaAs MMIC
Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Page 1 of 9
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+25.0 dBm Output Third Order Intercept (OIP3)
35.0 dB Gain Control
2.0 dBm LO Drive Level
9.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
320,190,110 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dB
dB
dBm
VDC
VDC
VDC
VDC
mA
mA
mA
mA
Min.
18.0
18.0
8.0
DC
-
-
-
-
-
-
-
-
-1.2
-1.2
-
-
-
-
Typ.
-
-
-
-
14.0
9.0
+2.0
15.0
5.0
+25.0
+5.0
-5.0
-0.2
-0.5
230
140
75
50
Max.
36.0
36.0
19.5
3.0
-
-
-
-
-
-
+5.5
-
+0.1
+0.1
280
170
90
60
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (PLO)
Isolation LO/RF @ LOx1
Isolation LO/RF @ LOx2
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1,2,3)
Source Bias Voltage (Vss)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3,4) Doubler, Mixer
Supply Current (Id1) (Vd1=5.0V, Vg=-0.2V Typical)
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
Supply Current (Id3) (Vd3=5.0V, Vg=-0.5V Typical)
Supply Current (Iss) (Vss=-5.0V)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
1,2
3
2
26TX0555
August 2005 - Rev 04-Aug-05