Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V gate drive BV
DSS
30V
▼ Lower on-resistance R
DS(ON)
40mΩ
▼ Surface mount package I
D
4.8A
▼ RoHS compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage ±12
Continuous Drain Current
3
4.8
Continuous Drain Current
3
3.8
Pulsed Drain Current
1
20
Total Power Dissipation 1.39
Linear Derating Factor 0.01
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
200816053-1/4
AP2422GY
Pb Free Plating Product
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G2
D2
S2
G1
D1
S1
2928-8
D1
D2
D1
D2
G2
G1
S2
S1