General Description
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™’s ultra high density proprietary
TrenchDMOS™ technology, this product demon-
strates high power handling and small size.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
Features
•V
DS(MAX)
= -20V
•I
D(MAX)
1
= -2.4A @ 25°C
• Low R
DS(ON)
:
• 100 mΩ @ V
GS
= -4.5V
• 175 mΩ @ V
GS
= -2.5V
SC59 Package
D
GS
Top View
12
3
AAT8401
20V P-Channel Power MOSFET
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient steady state
1
145 °C/W
R
θJA2
Maximum Junction-to-Ambient t<5 seconds
1
125 °C/W
R
θJF
Typical Junction-to-Foot
1
50 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±2.4
T
A
= 70°C ±2.0
A
I
DM
Pulsed Drain Current
2
±9
I
S
Continuous Source Current (Source-Drain Diode)
1
-0.9
P
D
Maximum Power Dissipation
1
T
A
= 25°C 1.0
W
T
A
= 70°C 0.6
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
Preliminary Information
8401.2003.06.0.61 1