Rev.1.00, Jul.06.2004, page 1 of 17
2SC5975
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
REJ03G0381-0100Z
Rev.1.00
Jul.06.2004
Features
• High gain bandwidth product
f
T
= 20 GHz typ.
• High power gain and low noise figure;
PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz
Outline
MFPAK-4
1
4
3
2
1. Emitter
2. Collector
3. Emitter
4. Base
WU-
1
23
4
Note: Marking is “WU-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
12 V
Collector to emitter voltage V
CEO
4V
Emitter to base voltage V
EBO
1.5 V
Collector current I
C
35 mA
Collector power dissipation Pc
*1
200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )