30A01SP
器件描述：Low-Frequency General-Purpose Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：31.32KB，共4页
Sponsor by e络盟器件资料摘要：
30A01SP
No.7512-1/4
Applications
•
Low-frequency power amplifier, muting circuit.
Features
•
Large current capacity.
•
Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ=0.67Ω[I
C
=0.3A, I
B
=15mA].
•
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
--30 V
Collector-to-Emitter Voltage V
CEO
--30 V
Emitter-to-Base Voltage V
EBO
-- 5 V
Collector Current I
C
--300 mA
Collector Current (Pulse) I
CP
--600 mA
Collector Dissipation P
C
400 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=--30V, I
E
=0 --0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=--4V, I
C
=0 --0.1 µA
DC Current Gain h
FE
V
CE
=--2V, I
C
=--10mA 200 500
Marking : XQ Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7512
30A01SP
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2033A
[30A01SP]
O3003 TS IM TA-100647
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
123
2.2
0.4
1.31.3
3.0
3.8nom
0.7 0.7
No.7512-1/4
Applications
•
Low-frequency power amplifier, muting circuit.
Features
•
Large current capacity.
•
Low collector-to-emitter saturation voltage (resistance).
R
CE
(sat) typ=0.67Ω[I
C
=0.3A, I
B
=15mA].
•
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
--30 V
Collector-to-Emitter Voltage V
CEO
--30 V
Emitter-to-Base Voltage V
EBO
-- 5 V
Collector Current I
C
--300 mA
Collector Current (Pulse) I
CP
--600 mA
Collector Dissipation P
C
400 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=--30V, I
E
=0 --0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=--4V, I
C
=0 --0.1 µA
DC Current Gain h
FE
V
CE
=--2V, I
C
=--10mA 200 500
Marking : XQ Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7512
30A01SP
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2033A
[30A01SP]
O3003 TS IM TA-100647
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
123
2.2
0.4
1.31.3
3.0
3.8nom
0.7 0.7