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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

AT49BV001A

器件描述:1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
器件厂商:ATMEL [ATMEL Corporation]
厂商主页:http://www.atmel.com/
文件大小:182.83KB,共18页
Sponsor by e络盟
器件资料摘要:
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage


Flash Memory
AT49BV001A
AT49BV001AN
AT49BV001AT
AT49BV001ANT
Rev. 3364C–FLASH–9/03
2
3
31
30
A9
A8
A10
CE
PLCC Top View
WE Write Enable
RESET RESET
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2
GND
I/O3 I/O4 I/O5 I/O6
A12 A15 A16 RESET* VCC WE NC
4
5
6
7
8
9
10
11
12
13
14
15
16
29
28
27
26
25
24
23
22
21
20
19
18
17
A13
A14
NC
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
Note: *This pin is a NC on the AT49BV001AN(T).
• Single Supply for Read and Write: 2.7 to 3.6
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Progra
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64
Fast Erase Cycle Time – 3 Seconds
Byte-by-Byte Programming – 30 µs/Byte Ty
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-
Its 1 megabit of memory is organized as 13
Atmel’s advanced nonvolatile CMOS technolog
55 ns with power dissipation of just 54 mW o
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
V
mming Lockout
K Bytes)
pical
system reprogrammable Flash Memory.
1,072 words by 8 bits. Manufactured with
y, the device offers access times to
ver the industrial temperature range.
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1 32A11 OE
Features
1