2SD1781K
Transistors
Rev.A 1/3
Medium Power Transistor (32V, 0.8A)
2SD1781K


zFeatures
1) Very Low VCE(sat).
VCE(sat) = −0.1V(Typ.)
（IC / IB= 500ｍA / 50mA）
2) High current capacity in compact package.
3) Complements the 2SB1197K.



zStructure
Epitaxial planar type
NPN silicon transistor


zExternal dimensions (Unit : mm)
0~0.1
2.8
±
0.2
1.6
0.3~0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59 Abbreviated symbol : AF
∗
All terminals have
same dimensions
∗
Denotes hFE


zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
40 V
V
V
A (DC)
mW
°C
°C
32
5
0.8
A (Pulse)1.5
∗
IC
ICP
200
150
−55 to +150
Symbol Limits Unit
∗
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature