PNP TRANSISTOR B772
3.0A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（ Ta=25℃）
PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION
Collector-Emitter Breakdown Voltage BVceo -30 V Ic=-1mA
Collector-Base Breakdown Voltage BVcbo -4 0 V Ic=-5u A
Emitter-Base Breakdown Voltage BVebo -5 V Ie=-50μ A
Collector-Base Leakage Icbo -0.1 uA Vcb=-10V
Emitter-Base Leakage Iebo -0.1 uA Veb=-5V
Collector-Emitter Saturation Voltage Vce（ sat） -0.5 V Ic=-2A, Ib=-0.1A
DC Current Gain Hfe1 80 390 Vce=-2V,Ic=-0.5A
Collector Current Ic -3 A
Peak Collector Current Icp -5 A(Pulse)
Current Gain Bandwidth fT 50 MHz Vcb=-5V, Ic=-0.1A
Output Capacitance Cob 50 pF Vcb=-10V,Ie=0,f=1MHz
Power Dissipation Pc 1.25 W
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55 150 ℃
Classification of Hfe
Rank R O Y
Range 80-160 100-200 170-390
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
z AF OUTPUT AMPLIFIER
z FOR DC-DC CONVERTER
z FOR CAMERA MOTOR DRIVER