PNP TRANSISTOR 8550S

-0.5A


null Power Dissipation: 0.625W

null Collector Current: -0.5A

null Collector-Base Voltage: -45V
TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（ Ta=25℃）

PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION
Collector-Emitter Breakdown Voltage BVceo - 2 5 V Ic=-0.1mA
Collector-Base Breakdown Voltage BVcbo -45 V Ic=-100u A
Emitter-Base Breakdown Voltage BVebo - 5 V Ie=-100μ A
Collector-Base Leakage Icbo -0.1 uA Vcb=-40V
Collector-Emitter Leakage Iceo -0.1 uA Vce=-20V
Emitter-Base Leakage Iebo -0.1 uA Veb=-5V
Collector-Emitter Saturation Voltage Vce(sat) -0.6 V Ic=-500mA, Ib=-50mA
Base-Emiiter Saturation Voltage Vbe(sat) -1.2 V Ic=-500mA, Ib=-50mA
DC Current Gain Hfe1
Hfe2
85
50
3 0 0 Vce=-1V,Ic=-50mA
Vce=-1V,Ic=-500mA
Collector Current Ic -0.5 A
Peak Collector Current Icp -8 A(Pulse)
Current Gain Bandwidth fT 150 MHz Vcb=-6V, Ic=-20mA
Output Capacitance Cob 32 pF Vcb=-20V,Ie=0,f=1MHz
Power Dissipation Pc 0.625 W
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55 150 ℃

Hfe1 Classification
Rank B C D
Range 85-160 120-200 160-300






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