PNP TRANSISTOR A733

-100mA


null AF OUTPUT AMPLIFIER





MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（ Ta=25℃）

PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION
Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA
Collector-Base Breakdown Voltage BVcbo -60 V Ic=5u A
Emitter-Base Breakdown Voltage BVebo -5 V Ie=50μ A
Collector-Base Leakage Icbo -0.1 uA Vcb=-60V
Emitter-Base Leakage Iebo -0.1 uA Veb=-5V
Collector-Emitter Saturation Voltage Vce（ sat） -0.18 -0.3 V Ic=-100mA, Ib=-10mA
DC Current Gain Hfe 90 200 600 Vce=-6.0V,Ic=-1.0mA
Collector Current Ic -100 mA
Current Gain Bandwidth fT 100 180 MHz Vce=-6V, Ie=10mA
Output Capacitance Cob 4.5 6.0 pF Vcb=-10V,Ie=0,f=1MHz
Power Dissipation Pc 0.25 W
Junction Temperature Tj 125 ℃
Storage Temperature Tstg -55 125 ℃


Classification of Hfe
Rank R Q P K
Range 90-180 135-270 200-400 300-600






STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295