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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N7002

器件描述:N Channel Small Signal MOSFET
器件厂商:STANSON [Stanson Technology]
文件大小:172.91KB,共2页
Sponsor by e络盟
器件资料摘要:
N Channel Small Signal MOSFET 2N7002

100mA





SOT-23
1 Gate
2 Source
3 Drain

null DRIVES SWITCHS, RELAYS, SOLENOIDS,
LAMPS, DISPLAYS, ETC.
null LOW OFFSET VOLTAGE
null LOW VOLTAGE OPERATION
null EASILY DRIVEN WITHOUT BUFFER







MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS( Ta=25℃)

PARAMETERS SYMBOL MIN MAX UNIT CONDITION
Drain-Source Breakdown Voltage V(BR)DSS 60 Vdc VGS=0, ID=10uA
Zero Gate Voltage Drain Current IDSS 1.0
1.0
uA
mA
VDS=48V, VGS=0
VDS=48V, VGS=0, Tj=125℃
Gate-Body Leakage Current, Forward IGSSF -10 nA VGSF=15V, VDS=0
Gate Threshhold Voltage VGS(th) 0.8 3.0 V VDS=VGS, ID=1.0A
Drain-Source On-Resistance RDS(on) 7.5
7.5
Ohm
Ohm
VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
Drain-Source On-Voltage V DS(on) 2.5
0.45
V VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
On-State Drain Current Id(on) 75 mA VGS=4.5V, VDS=10V
Input Capacitance Ciss 60 pF VDS=25V, VGS=0, f=1 MHz
Output Capacitance Coss 25 pF VDS=25V, VGS=0, f=1 MHz
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0, f=1 MHz
Turn-On Delay Time ton 10 nS
Turn-Off Delay Time toff 10 nS
Power Dissipation Pc 0.35 W
Junction Temperature Tj 125 ℃
Storage Temperature Tstg -55 125 ℃









STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295