© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
1 Publication Order Number:
BAT54XV2T1/D
BAT54XV2T1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
• Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
C0113JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to 125 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad.
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
http://onsemi.com
SOD−523
CASE 502
PLASTIC
1
2
1
Device Package Shipping
†
ORDERING INFORMATION
BAT54XV2T1 SOD−523 3000 / Tape & Reel
MARKING DIAGRAM
BAT54XV2T1G SOD−523
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
C0071 = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
JVM C0071
C0071