January 2005
2005 Fairchild Semiconductor Corporation FDW2509NZ Rev C(W)
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
Features
• 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V
RDS(ON) = 26 mΩ @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12
ID Drain Current – Continuous (Note 1a) 7.1 A
– Pulsed 30
PD Power Dissipation for Single Operation (Note 1a) 1.6 W
(Note 1b) 1.1
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W
(Note 1b) 114
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2509NZ FDW2509NZ 13’’ 12mm 3000 units
FDW2509NZ