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BAS70LT1G

器件描述:SCHOTTKY BARRIER DIODES
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:45.87KB,共4页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1 Publication Order Number:
BAS70LT1/D
BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Pb−Free Package is Available
• Extremely Fast Switching Speed
• Low Forward Voltage
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
SOT−23
CASE 318
STYLE 8
http://onsemi.com
BE Specific Device Code
M = Date Code
MARKING DIAGRAM
1
2
3
Device Package Shipping

ORDERING INFORMATION
BAS70LT1 SOT−23 3000 / Tape & Reel
BAS70LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BE M
3
CATHODE
1
ANODE
70 VOLTS SCHOTTKY
BARRIER DIODES