TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900
BUZ901
V
DSX
Drain – Source Voltage
V
GSS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
±14V
8A
8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
39
.
0
±
1.
1
3
0
.
2
±
0.
15
16.
9 ± 0.
1
5
R 4.0 ± 0.1 R 4.4 ± 0.2
Ø 1
.
0
Ø 2
0
M
a
x
.
1.50
Typ.
11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
12
N–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905 & BUZ906
Pin 1 – Gate
TO–3
Pin 2 – Drain Case – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900
160V
BUZ901
200V