BAT54LT1G
器件描述:Schottky Barrier Diodes
文件大小:48.1KB,共4页
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器件资料摘要:
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 8
Publication Order Number:
BAT54LT1/D
BAT54LT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
• Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 Volts
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
2.0
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Junction Temperature T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can oc-
cur. Maximum ratings applied to the device are individual stress limit val-
ues (not normal operating conditions) and are not valid simultaneously. If
these limits are exceeded, device functional operation is not implied, dam-
age may occur and reliability may be affected.
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MARKING
DIAGRAM
3
12
JV3 MC0071
C0071
1
2
3
3
CATHODE
1
ANODE
(TO−236AB)
SOT−23
CASE 318
STYLE 8
Preferred devices are recommended choices for future use
and best overall value.
JV3 = Device Code
M = Date Code
C0071 = Pb−Free Package
(Note: Microdot may be in either location)
Device Package Shipping
†
ORDERING INFORMATION
BAT54LT1 SOT−23 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAT54LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
http://onsemi.com