© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 9
1 Publication Order Number:
1N5817/D
1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
• Extremely Low V
F
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Lead Temperature for Soldering Purposes:
260°C Max for 10 Seconds
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Polarity: Cathode Indicated by Polarity Band
• ESD Ratings: Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 59−10
DO−41
PLASTIC
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
http://onsemi.com
A = Assembly Location
1N581x = Device Number
x = 7, 8, or 9
YY = Year
WW = Work Week
C0071 = Pb−Free Package
A
1N581x
YYWWC0071
C0071
(Note: Microdot may be in either location)