copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Absolute Maximum Ratings ( T
J
= 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
V
DRM
Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz, Gate open 600 V
I
T(RMS)
R.M.S On-State Current T
C
=101 °C, Full Sine wave 6.0 A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
60/66 A
I
2
t
I
2
t for Fusing
tp = 10ms 18
A
2
s
P
GM
Peak Gate Power Dissipation T
C
= 101 °C, Pulse width ≤ 1.0us 3.0 W
P
G(AV)
Average Gate Power Dissipation Over any 20ms period 0.3 W
I
GM
Peak Gate Current tp = 20us, T
J
=125°C 2.0 A
V
GM
Peak Gate Voltage tp = 20us, T
J
=125°C 10 V
T
J
Operating Junction Temperature - 40 ~ 125 °C
T
STG
Storage Temperature - 40 ~ 150 °C
Mar, 2004. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
T(RMS)
= 6 A )
◆ High Commutation dv/dt
◆ Sensitive Gate Triggering 4 Mode
◆ Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
2.T2
3.Gate
1.T1
Symbol
○
○
○
TO-220
▼▲
1/5
Sensitive Gate Triacs
BT236-DSemiWell Semiconductor
1
3
2
Preliminary