Absolute Maximum Ratings ( T
J
= 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
V
DRM
Repetitive Peak Off-State Voltage 600 V
I
T(RMS)
R.M.S On-State Current T
C
= 104 °C 4A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
25/27 A
I
2
t
I
2
t
t = 10ms 3.1
A
2
s
P
GM
Peak Gate Power Dissipation 5 W
P
G(AV)
Average Gate Power Dissipation Over any 20ms period 0.5 W
I
GM
Peak Gate Current 2 A
V
GM
Peak Gate Voltage 5 V
T
J
Operating Junction Temperature - 40 ~ 125 °C
T
STG
Storage Temperature - 40 ~ 150 °C
BT134-F
Nov, 2003. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
T(RMS)
= 4 A )
◆ High Commutation dv/dt
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
2.T2
3.Gate
1.T1
Symbol
○
○
○
▼▲
1/6
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-126
3
2
1
Preliminary