Absolute Maximum Ratings ( T
J
= 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
V
DRM
Repetitive Peak Off-State Voltage 600 V
I
T(RMS)
R.M.S On-State Current T
C
= 104 °C, Full Sine wave 4A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
25/27 A
I
2
t
I
2
t for Fusing
t = 10ms 3.1
A
2
s
P
GM
Peak Gate Power Dissipation 5 W
P
G(AV)
Average Gate Power Dissipation Over any 20ms period 0.5 W
I
GM
Peak Gate Current 2 A
V
GM
Peak Gate Voltage 5 V
T
J
Operating Junction Temperature - 40 ~ 125 °C
T
STG
Storage Temperature - 40 ~ 150 °C
BT134-D
Mar, 2004. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
T(RMS)
= 4 A )
◆ High Commutation dv/dt
◆ Sensitive Gate Triggering 4 Mode
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
2.T2
3.Gate
1.T1
Symbol
○
○
○
▼▲
1/6
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-126
3
2
1
Preliminary