Absolute Maximum Ratings
Symbol Parameter Value Units
V
DSS
Drain to Source Voltage 60 V
I
D
Continuous Drain Current(@T
A
= 25°C) 115 mA
I
DM
Drain Current Pulsed (Note 1) 800 mA
V
GS
Gate to Source Voltage ±20 V
P
D
Total Power Dissipation Single Operation (T
A
=25°C) 0.2 W
Total Power Dissipation Single Operation (T
A
=70°C) 0.15 W
T
STG,
T
J
Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
300 °C
Thermal Characteristics
Symbol Parameter
Value
Units
Min. Typ. Max.
R
θJA
Thermal Resistance, Junction-to-Ambient - - 625 °C/W
2N7002
January, 2003. Rev. 0. 1/6
Features
■ R
DS(on)
(Max 7.5Ω )@V
GS
=10V
R
DS(on)
(Max 7.5Ω )@V
GS
=4.5V
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
SemiWell Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Logic N-Channel MOSFET
Symbol
SOT-23
●
●
●
▲
{
{
{
◀
●
●
●
◀
2. Drain
3. Source
1. Gate
G
S
D