Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
30V
▼ Simple Drive Requirement R
DS(ON)
80mΩ
▼ Fast Switching I
D
15A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 4.8 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice 200227032
Thermal Data
Parameter
Pulsed Drain Current
1
50
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.22
Storage Temperature Range
Total Power Dissipation 28
-55 to 150
Continuous Drain Current, V
GS
@ 10V 15
Continuous Drain Current, V
GS
@ 10V 9
Drain-Source Voltage 30
Gate-Source Voltage
AP15N03GH/J
Parameter Rating
Pb Free Plating Product
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03GJ) is available for low-profile applications.
± 20
G
D
S
TO-251(J)
G
D
S
TO-252(H)
G
D
S