AQY410EH
器件描述：GU (General Use)-E Type 1-Channel (Form B) 4-pin Type
器件厂商：NAIS [Nais(Matsushita Electric Works)]
文件大小：49.7KB，共3页
Sponsor by e络盟器件资料摘要：
AQY41
m
EH
122
1
2
4
3
PhotoMOS
RELAYS
GU (General Use)-E Type
1-Channel (Form B)
4-pin Type
mm inch
3.2
.126
6.4
.252
4.78
.188
2.9
.114
6.4
.252
4.78
.188
FEATURES
1. Low on resistance for normally-
closed type
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
Cross section of the normally-closed type
of power MOS
,
#01
#02
#02
#03#04
#04
#06#07
#01#03#04#06#02
#08
#02
,,#01 #03
#05#07#08
Source electrode
N–
N+
N+ N+
P+
N+ N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
2. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
3. Compact 4-pin DIP size
The device comes in a compact
(W)6.4
·
(L)4.78
·
(H)3.2mm
(W).252
·
(L).188
·
(H).126inch, 4-pin DIP
size
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. High sensitivity, low ON resistance
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Low ON re-
sistance of 18
W
(AQY410EH). Stable
operation because there are no metallic
contact parts.
6. Low-level off state leakage current
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the initial letters of the product number "AQY", the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from
the seal.
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and
reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
type
Reinforced
5,000 V
350 V 130 mA AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ
1 tube contains 100 pcs.
1 batch contains 1,000 pcs.
1,000 pcs.
400 V 120 mA AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C 77
F)
Item Symbol AQY410EH (A) AQY414EH (A) Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
350 V 400 V
Continuous load current I
L
0.13 A 0.12 A
Peak load current I
peak
0.4 A 0.3 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
5,000 V AC
Temperature
limits
Operating T
opr
–40
C to +85
C –40
F to +185
F Non-condensing at low temperatures
Storage T
stg
–40
C to +100
C –40
F to +212
F
TESTING
m
EH
122
1
2
4
3
PhotoMOS
RELAYS
GU (General Use)-E Type
1-Channel (Form B)
4-pin Type
mm inch
3.2
.126
6.4
.252
4.78
.188
2.9
.114
6.4
.252
4.78
.188
FEATURES
1. Low on resistance for normally-
closed type
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
Cross section of the normally-closed type
of power MOS
,
#01
#02
#02
#03#04
#04
#06#07
#01#03#04#06#02
#08
#02
,,#01 #03
#05#07#08
Source electrode
N–
N+
N+ N+
P+
N+ N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
2. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
3. Compact 4-pin DIP size
The device comes in a compact
(W)6.4
·
(L)4.78
·
(H)3.2mm
(W).252
·
(L).188
·
(H).126inch, 4-pin DIP
size
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. High sensitivity, low ON resistance
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Low ON re-
sistance of 18
W
(AQY410EH). Stable
operation because there are no metallic
contact parts.
6. Low-level off state leakage current
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the initial letters of the product number "AQY", the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from
the seal.
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and
reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
type
Reinforced
5,000 V
350 V 130 mA AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ
1 tube contains 100 pcs.
1 batch contains 1,000 pcs.
1,000 pcs.
400 V 120 mA AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
C 77
F)
Item Symbol AQY410EH (A) AQY414EH (A) Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
350 V 400 V
Continuous load current I
L
0.13 A 0.12 A
Peak load current I
peak
0.4 A 0.3 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
5,000 V AC
Temperature
limits
Operating T
opr
–40
C to +85
C –40
F to +185
F Non-condensing at low temperatures
Storage T
stg
–40
C to +100
C –40
F to +212
F
TESTING