Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
Agilent AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Description
Agilent’s AMMC- 5620 MMIC is a
GaAs wide- band amplifier
designed for medium output
power and high gain over the 6
− 20 GHz frequency range. The
3 cascaded stages provide high
gain while the single bias
supply offers ease of use. It is
fabricated using a PHEMT
integrated circuit process. The
RF input and output ports have
matching circuitry for use in
50- Ω environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
Features
• Frequency Range: 6 - 20 GHz
High Gain: 19 dB Typical
Output Power: 15dBm Typical
Input and Output Return Loss: < -10
dB
Positive Gain Slope: + 0.21dB/GHz
Typical
Single Supply Bias: 5 V @ 95 mA
Typical
Applications
General purpose, wide-band
amplifier in communication
systems or microwave
instrumentation
High gain amplifier
AMMC-5620 Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
DD
Drain Supply Voltage V 7.5
I
DD
Total Drain Current mA 135
P
DC
DC Power Dissipation W 1.0
P
in
RF CW Input Power dBm 20
T
ch
Channel Temp. °C +150
T
b
Operating Backside Temp. °C -55
T
stg
Storage Temp. °C -65 +165
T
max
Maximum Assembly Temp. (60 sec max) °C +300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Chip Size: 1410 x 1010 µm (55.5 x 39.7 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)