EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

AMMC-5024

器件描述:Agilent AMMC-5024 30 KHz?40 GHz Traveling Wave Amplifier
器件厂商:HP [Agilent(Hewlett-Packard)]
文件大小:187.26KB,共10页
Sponsor by e络盟
器件资料摘要:
Agilent AMMC-5024
30 KHz – 40 GHz
Traveling Wave Amplifier
Data Sheet
Description
Agilent’s AMMC-5024 is a broad-
band PHEMT GaAs MMIC TWA
designed for medium output
power and high gain over the full
30 KHz to 40 GHz frequency
range. The design employs a
9-stage, cascade-connected FET
structure to ensure flat gain and
power as well as uniform group
delay. E-beam lithography is used
to produce uniform gate lengths
of 0.15 mm and MBE technology
assures precise semiconductor
layer control.
Features
• Wide frequency range:
30 KHz – 40 GHz
• High gain: 16 dB
• Gain flatness: ± 0.75 dB
• Return loss:
Input: 13 dB, Output: 13 dB
• Medium power: P-1dB = 22.5 dBm
at 22 GHz
• Low noise figure: 4.6 dB at 26 GHz
Applications
• Communication systems
• Microwave instrumentation
• Optical systems
• Broadband applications requiring
flat gain and group delay with
excellent input and output port
matches over the 30 KHz and
40 GHz frequency range
Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
dd
Positive Drain Voltage V 10
I
dd
Total Drain Current mA 340
V
g1
First Gate Voltage V -9.5 0
I
g1
First Gate Current mA -38 +1
V
g2
Second Gate Voltage V -3.5 +4
I
g2
Second Gate Current mA -20
P
in
CW Input Power dBm 17
T
ch
Operating Channel Temperature °C +150
T
b
Operating Backside Temperature °C -55
T
stg
Storage Temperature °C -65 +165
T
max
Max. Assembly Temp (60 sec max) °C +300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Chip Size: 2350 x 1050 µm (92.5 x 41.3 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (2.95 x 0.4 mils)