BTPA94N3
器件描述：High Voltage PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：168.18KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTPA94N3 CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTPA94N3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400
Emitter-Base Voltage VEBO -6 V
Collector Current IC -300 mA
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTPA94N3
SOT-23
B： Base
C： Collector
E： Emitter
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTPA94N3 CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTPA94N3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400
Emitter-Base Voltage VEBO -6 V
Collector Current IC -300 mA
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTPA94N3
SOT-23
B： Base
C： Collector
E： Emitter