BTP8550SA3
器件描述：General Purpose PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：152.96KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTP8550SA3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTP8550SA3
Description
The BTP8550SA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• Large collector current , IC= -700mA
• Low VCE(sat)
• Complementary to BTN8050SA3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -20
Emitter-Base Voltage VEBO -5 V
Collector Current IC -700 mA
Base Current IB -100 mA
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTP8550SA3
B： Base
C： Collector
E： Emitter
E C B
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTP8550SA3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTP8550SA3
Description
The BTP8550SA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• Large collector current , IC= -700mA
• Low VCE(sat)
• Complementary to BTN8050SA3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -20
Emitter-Base Voltage VEBO -5 V
Collector Current IC -700 mA
Base Current IB -100 mA
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTP8550SA3
B： Base
C： Collector
E： Emitter
E C B