BTP6520A3
器件描述：High Voltage PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：154.35KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C321A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTP6520A3 CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTP6520A3
Features
• High Breakdown Voltage:BVCEO≥-350V
• Complementary to BTN6517A3
Symbol
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -350 V
Collector-Emitter Voltage VCEO -350 V
Emitter-Base Voltage VEBO -5 V
Collector Current---continuous IC -500 mA
Power Dissipation @TA=25℃ Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTP6520A3
TO-92
B： Base
C： Collector
E： Emitter
Spec. No. : C321A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTP6520A3 CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTP6520A3
Features
• High Breakdown Voltage:BVCEO≥-350V
• Complementary to BTN6517A3
Symbol
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -350 V
Collector-Emitter Voltage VCEO -350 V
Emitter-Base Voltage VEBO -5 V
Collector Current---continuous IC -500 mA
Power Dissipation @TA=25℃ Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTP6520A3
TO-92
B： Base
C： Collector
E： Emitter